A broadband small‐signal model extraction methodology over 0.2‐220 GHz for bulk FinFETs in RF CMOS technology

This study presents a physical-based broadband radio frequency (RF) small-signal equivalent circuit model (ECM) for triple-gate (TG) bulk fin field-effect transistors (FinFETs) and its extraction methodology. To increase model accuracy and extend the effective frequency band, substrate effect, test ground-signal-ground (G-S-G) pads, and metal interconnection parasitics are considered together in the transistor model. All the elements in the model are extracted from a combination of analysis and physical equations using multibias scattering parameters. On the basis of the proposed model, the simulation results correspond to the measured results in the frequency range from 200 MHz to 220 GHz without any complex fitting or optimization steps.