Wurtzite AlP y N1−y : a new III-V compound semiconductor lattice-matched to GaN (0001)

We report on a new member of the III-nitride family, wurtzite AlPyN1-y, tensile strained, or lattice matching (at 10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlPyN1-y can be grown between 1050 degrees C to 1250 degrees C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlPyN1-y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of 150 +/- 50 Omega/square, which makes AlPyN1-y promising for electronic applications. (c) 2020 The Japan Society of Applied Physics