A 60 GHz 8-Way Combined Power Amplifier in 0.18 μm SiGe BiCMOS

A 60 GHz fully-integrated 8-way combined power amplifier (PA) is developed in a standard 0.18 $\mu \text{m}$ SiGe BiCMOS technology. The 8-way power splitter and combiner are co-optimized with transformer based baluns inside the eight differential PA cells, and hence resulting in minimum loss and high gain, linearity and efficiency. The measurement shows that the PA can achieve a gain of 22.2 dB...