ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory

ULTRARAM is a III–V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a $2\times2$ memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500- $\mu \text{s}$ duration, a remarkable ...