Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

G. Lama,M. Bernard,N. Bernier,G. Bourgeois,E. Nolot, N. Castellani, J. Garrione, M. C. Cyrille,G. Navarro,E. Nowak

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

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摘要

Phase-Change Memory (PCM) demonstrated to be a mature Non- Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type (M-SCM) and storage-type (S-SCM). In this work, we present how aGeSbTe (aGST) alloy can address both SCM types, in particular using Si doping. Thanks to the electrical characterization of 4 kb PCM arrays, we show how Si do...

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关键词

Phase change materials,Protocols,Semiconductor device reliability,Metals,Doping,Crystallization,Programming

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