Systematic Study of Process Impact on FinFET Reliability

Rakesh Ranjan,Ki-Don Lee,Md Iqbal Mahmud, Mohammad Shahriar Rahman, Pavitra Ramadevi Perepa, Charles Briscoe Larow, Caleb Dongkyun Kwon, Maihan Nguyen,Minhyo Kang,Ashish Kumar Jha, Ahmed Shariq, Shamas Musthafa Ummer, Susannah Laure Prater,Hyunchul Sagong,HwaSung Rhee

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

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摘要

Reliability of Core and 10 FinFET is extensively investigated with various process steps at Fin, Source/ Drain, sacrificial Gate-Metal, and High-Pressure D2 Anneal. By modulating the process knobs, we quantified the effect of oxide traps (at bulk or interface) on reliability mechanisms of replacement metal gate (RMG). The results are summarized as a process-reliability optimization guideline.

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关键词

CP,FinFET,HPD2,NBTI,Oxide Traps,RMG

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