Mitigating Switching Variability In Carbon Nanotube Memristors

J. Farmer, W. Whitehead, A. Hall,Dmitry Veksler,Gennadi Bersuker,David Z. Gao,Al-Moatasem El-Sayed,T. Durrant,Alexander L. Shluger,Thomas Rueckes, Lee Cleveland, Harry Luan, R. Sen

2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2021）

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摘要

Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics.

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关键词

Neuromorphic computing, CNT, RRAM

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