Assessing Sicr Resistor Drift For Automotive Analog Ics

K. A. Stewart, K. Kimura, M. Ring, K. Noldus, P. Hulse, R. C. Jerome,A. Hasegawa,J. P. Gambino, D. T. Price

2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)(2021)

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摘要
A very stable resistor is needed for analog integrated circuits employed in harsh automotive environments. Precision SiCr thin-film resistors have been characterized by DC and pulsed I-V measurements, high-temperature operating life, and high temperature storage stress. Maximum current density for a maximum drift of 0.1% over the product lifetime are determined. Furthermore, SiCr resistors are stressed to failure and the physical failure mechanism is analyzed.
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关键词
SiCr resistor, resistance drift, safe-operating area
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