Enhanced Performance Of Antimony Selenide Thin Film Solar Cell Using Pbi2 As A Dopant

Antimony selenide (Sb2Se3) is an emerging photovoltaic material. We demonstrate that PbI2 is an effective p-type dopant for Sb2Se3. The Sb2Se3 film was doped by PbI2 by thermal diffusion. Both the hole concentration and conductivity are dramatically increased by doping. We fabricated the Sb2Se3 solar cell using C-60 as an electron transport layer by vacuum thermal evaporation. By PbI2 doping, the open-circuit voltage (V-oc) is increased from 0.32 to 0.38V, and the power conversion efficiency is improved from 2.87% to 4.43%. This work provides an effective p-type dopant for Sb2Se3.