Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C SG13G2 and SG13G3 BiCMOS Technologies

Mesut Inac,Adel Fatemi,Falk Korndörfer,Holger Rücker,Friedel Gerfers,Andrea Malignaggi

IEEE Microwave and Wireless Components Letters（2021）

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摘要

In this letter, a comparison between two ultra-wideband traveling wave amplifiers (TWAs) designed in two different SiGe:C technologies consuming only 500 mW is presented. The first design utilizes the IHP’s 130-nm SiGe:C BiCMOS SG13G2 technology, featuring $f_{T}/f_{{MAX}}\,\,=300$ /500 GHz, while the second design uses the IHP’s 130-nm SiGe:C BiCMOS SG13G3 technology, featuring $f_{T}/f_{ {MAX}...

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关键词

Gain,BiCMOS integrated circuits,Wireless communication,Silicon germanium,Broadband communication,Microwave circuits,Semiconductor device measurement

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