Modeling, Simulations, And Optimizations Of Gallium Oxide On Gallium-Nitride Schottky Barrier Diodes

CHINESE PHYSICS B(2021)

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摘要
With technology computer-aided design (TCAD) simulation software, we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode (SBD). The parameters of gallium oxide are defined as new material parameters in the material library, and the SBD turn-on and breakdown behavior are simulated. The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than GaN SBD. Also, to solve the lattice mismatch problem in the real epitaxy, we add a ZnO layer as a transition layer. The simulations show that the device still has good properties after adding this layer.
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关键词
technology computer-aided design (TCAD), gallium oxide (Ga2O3), gallium nitride (GaN), Schottky barrier diode (SBD)
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