Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm(2) V-1 s(-1), a high current on/off ratio of approximate to 10(6), a subthreshold swing of 2.7 V dec(-1), and a low effective interface trap density (N-t,N-eff) of 7.85 x 10(10) cm(-2) eV(-1) at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current-voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.