A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)(2021)
摘要
This paper presents a 314-344 GHz high output power push-push frequency doubler for radar applications with 1 dBm P
sat
at 324 GHz and 30 GHz P
sat
3 dB-bandwidth. It is driven by a three-stage, cascode-based D-band driving stage, providing a differential saturated output power of 14.3 dBm at 154 GHz with a peak PAE of 4.5% and 13.4 dBm output referred P
1
dB
. The chip is fabricated using a 130 nm SiGe BiCMOS technology with f
t
/f
max
of 250 GHz / 370 GHz. Thanks to the use of harmonic reflectors an overall peak conversion gain of 20 dB is achieved and remains above 6 dB at saturation.
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关键词
frequency doubler,power amplifier,radar
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