General approach for anisotropic magnetoresistance calculations used for revealing the role of cobalt nanowire’s geometrical details

•Anisotropic magnetoresistance (AMR) measurements of magnetic nanowire grown by focused-electron-beam-induced deposition.•Micromagnetic simulations combined with classical electromagnetism reproduce the main features of the experimental AMR of the magnetic nanowire.•The voltage terminals induce growth of domain walls (DWs) around them during the magnetization reversal of the nanostructure.•The propagation features of the DWs are the main responsible for the AMR signal behaviour.