A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

Edward Van Sieleghem,Andreas Süss,Pierre Boulenc,Jiwon Lee,Gauri Karve,Koen De Munck,Celso Cavaco,Chris Van Hoof

IEEE Electron Device Letters（2021）

引用 16|浏览8

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摘要

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized $0.13~\mu \text{m}$ CMOS technology is presented. The SPAD has a depleted absorption volume of approximately $15\,\,\mu \text{m}\,\,\times 15\,\,\mu \text{m}\,\,\times 18\,\,\mu \text{m}$ . Electrons generated in the absorption region are efficiently transported by drift to a central active av...

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关键词

Single-photon avalanche diodes,Cathodes,Absorption,Silicon,Substrates,Timing,Transistors

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