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Fast and Comprehensive Simulation Methodology for Layout-Based Power-Noise Side-Channel Leakage Analysis

2020 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)(2020)

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摘要
Side-channel attacks can non-invasively extract secret information from hardware devices with a large number of “side-channel” measurements. For example, measuring the dynamic voltage drop of a cryptographic chip can disclose the secret keys by power-noise side-channel emission. To identify the design vulnerabilities and to verify the design countermeasures against side-channel attacks, design tim...
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关键词
Semiconductor device modeling,Analytical models,Semiconductor device measurement,Voltage measurement,Computational modeling,Layout,Side-channel attacks
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