Non-contact C-V and photoluminscence measurements for More-than-Moore SOI devices

J.P. Gambino,D. Price, R. Jerome, H. Ziad, T. Frank, A. Kerekes, V. Samu,A. Ross,Z. Kiss,J. Byrnes

2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2021）

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摘要

A number of More-than-Moore (MtM) devices use Silicon-on-Insulator (SOI) wafers, including power devices and CMOS image sensors. Non-contact capacitance-voltage (CV) and photoluminescence measurements are well established for characterization of dielectrics and minority carrier lifetime on bulk Si wafers. In this study, we extend these measurements to More-Than-Moore (MtM) Silicon-On-Insulator (SO...

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关键词

Semiconductor device measurement,Capacitance-voltage characteristics,Silicon-on-insulator,Photoluminescence,Dielectric measurement,Silicon,Capacitance measurement

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