Advanced EUV Resist Characterization using Scatterometry and Machine Learning

Daniel Schmidt,Karen Petrillo,Mary Breton,Jennifer Fullam,Roy Koret,Igor Turovets,Aron Cepler

2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2021）

引用 4|浏览4

暂无评分

摘要

Comprehensive EUV resist characterization for line and space patterns at pitches between 32 and 40 nm using scatterometry in conjunction with machine learning algorithms is presented and discussed. Controlled experimental variations of EUV single expose resist lines were introduced by exposure dose and illumination conditions. Scanning electron microscopy and atomic force microscopy were used to c...

查看译文

关键词

Semiconductor device measurement,Scanning electron microscopy,Machine learning algorithms,Radar measurements,Spaceborne radar,Resists,Machine learning

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要