Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model

Lucas Mota Barbosa da Silva,Michelly de Souza

2021 IEEE Latin America Electron Devices Conference (LAEDC)（2021）

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摘要

This work presents a simulation strategy to simulate Graded-Channel SOI MOSFET electrical characteristics using BSIM SOI SPICE model. The use of uniformly doped transistor model is possible by adjusting low field mobility, degradation mobility factors and parameters related to channel length modulation and DIBL effects. A good agreement with experimental data was achieved at device level. The simu...

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关键词

SPICE Simulation,SOI,Graded-Channel transistors,BSIM SOI,Analog Circuits

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