Top-Gated Carbon Nanotube FETs from Quantum Simulations: Comparison with Experiments

We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green’s function (NEGF) quantum transport method coupled with a $\vec k \cdot \vec p$ description of the electronic structure is demonstrated to achieve excellent agreement with the...