A 1 Tb 4b/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us tR and 1.2Gb/s/pin Interface

In this paper, 1Tb 4b/cell NAND flash memory successfully developed and manufactured using 92 stacked WLs is presented. The chip achieved 7.53 Gb/mm2 of areal density with 18 MB/s program throughput, $\text{tR}=110\mu\mathrm{s}$ and 1.2Gb/s IO speed. The chip size of it is reduced by 25% over the previous work [5] and, also became the fastest chip as the program and read performance are enhanced b...