Regulation of Cr3+ Doping on the Defect Characteristics and Magnetic Order in the CuFe1-xCrxO2 Ceramics

The defect characteristic and magnetic properties of CuFe1-xCrxO2 (x = 0.0-0.4) compounds have been investigated in detail. The results demonstrate that Cr3+ ions enter into the CuFeO2 lattice sites and induce local lattice contraction but do not change the valance state of Cu+ and Fe3+ ions. We calculate the positron annihilation lifetime in the bulk and vacancy defect trapping states by the atomic superposition method in 3 x 3 x 1 CuFeO2 super-cell. Combined with theoretical calculation results, the positron annihilation results indicate that the positrons are mainly annihilated in vacancy clusters in CuFe1-xCrxO2. The substitution of Cr3+ for Fe3+ ions decreases the open volume and increases the concentration of vacancy defects but does not change the integral defect surroundings at annihilation sites. Magnetization measurements manifest that doping with Cr3+ reduces the antiferromagnetic transition temperature and promotes the formation of short-range magnetic correlation. Meanwhile, the enhanced short-range magnetic correlation in Cr3+-doped CuFeO2 is more readily driven by thermal activation energy and a faster dynamic behavior can be seen in time windows.