Surface Passivation Of Crystalline Silicon Wafer Using H2s Gas

We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 mu s) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600 degrees C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds.