Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Tomáš Vaněk,František Hájek,Filip Dominec,Tomáš Hubáček,Karla Kuldová,Jiří Pangrác,Tereza Košutová,Pavel Kejzlar,Petr Bábor,Artur Lachowski,Alice Hospodková

Journal of Crystal Growth（2021）

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摘要

•An extremely thick 2 μm InGaN/GaN MQW active layer was achieved.•V-pits significantly change surface morphology and cause a PL redshift of top QWs.•The surface migration of adsorbed atoms is the driving force of the PL redshift.•STEM results confirm higher thicknesses of upper MQW stacks and GaN spacers.•WLI and SSRCL connect QWs morphology changes with their spectral properties.

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关键词

A1. Characterization,A1. Growth models,A3. MOVPE,B1. Nitrides,B3. Scintillators

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