Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

In a ${p}$ -channel field-effect-transistor ( ${p}$ -FET) bridge HEMT device recently realized on a commercial ${p}$ -GaN/AlGaN/GaN-on-Si power HEMT epi-wafer, it is revealed that the device’s reverse-conduction turn-on voltage ( ${V}_{\text {RT}}$ ) can be effectively decoupled from the forward threshold voltage ( ${V}_{\text {TH}}$ ) of Schottky-type ${p}$ -GaN gate HEMTs. Unlike the conventi...