Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

•We propose Pt/a-Ta2O5/TiN memristor device for hardware driven neuromorphic.•Increased and decreased conductivity can be observed by potentiation and depression.•Theoretical confirmation of this interfacial layer is also provided by charge transportation phenomena.•Design the single layer neural network for MINIST handwritten pattern recognition.•Integrated charge density plots depicted charge transfer mechanism.