Analysis Of Low Frequency Noise In In Situ Fluorine-Doped Znsno Thin-Film Transistors

We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 degrees C, while the saturated field effect mobility was measured to be 14.0 cm(2) V-1 s(-1), the switching current ratio is over 10(9), and the Hooge parameter is about 10(-2) without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.