Pressure-controlled scattering cancellation cloaking with a single shell of semiconductor

A pressure-controlled cloak with a single shell of semiconductor (GaAs) has been proposed and studied based on scattering cancellation cloaking technique and finite element method. The theoretically calculated and numerically simulated results have confirmed that the monolayer semiconducting cloak can greatly suppress the total scattering cross-section of the composite structure. The cloaking frequency can be tuned because the permittivity of GaAs can be modulated by external pressure. This may offer a potential way to design monolayer semiconducting cloak to realize pressure-controlled invisibility.