Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High-k Gate Dielectric

This paper reports the high-temperature dynamic behaviour of a 3.3kV-rated Silicon Carbide (SiC) Power MOSFETs with high-k gate stack. Several devices have been tested under nominal and SOA bias conditions during standard inductive load switching test (ELS). Moreover, devices' ruggedness has been tested by means of short-circuit (SC) pulses with bus voltage of 1.8kV. Lastly, the tests have shown stable threshold voltage when operating with Si-standard gate voltage swing of +/- 15V.