Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation

This paper describes that an unique ESD tolerance dependence on a backgate ratio of fully isolated RESURF LDMOS for various cases of rated voltage. For the LDMOS of rated voltage below 60V, the ESD tolerance increases as the backgate ratio increases, which is well-known method to achieve the highly-ESD tolerant devices though scarifying the on-resistance. However, the LDMOS of rated voltage above ...