Device design to achieve low loss and high short-circuit capability for SiC Trench MOSFET

Yuki Mori,Takeru Suto,Tomoka Suematsu,Haruka Shimizu,Naoki Watanabe,Hiroshi Miki,Digh Hisamoto,Toru Masuda,Akio Shima

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2021）

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摘要

The trade-off between low on-resistance and high short-circuit (SC) capability crucial for silicon carbide metal-oxide-semiconductor (MOS) field-effect transistors. To break this trade-off, we clarified the design parameters that are key in improving SC capability and confirmed that our trench-etched double-diffused MOS (TED-MOS) can be suitably designed using its unique parameters to achieve low ...

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关键词

Resistance,Integrated circuits,MOSFET,Silicon carbide,Design methodology,Logic gates,JFETs

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