Fabrication of Nanoslits with <111> Etching TSWE Method

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by crystal plane etching. The etching rate of the crystal plane is reasonably slow as it is only 1/45 of the etching rate, thus allowing and therefore good slits-opening controllability. By slowly etching the ...