Improvement of β-Ga 2 O 3 MIS-SBD Interface Using Al-Reacted Interfacial Layer

In this article, a $\beta $ -Ga2O3 metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for the first time and compared with conventional metal-semiconductor (MS) Schottky barrier diode (SBD). The aluminum oxide is formed by sputtering a thin Al layer on Ga2O3 substrate and then annealed in O2 at 300 °C. With the inserti...