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Experimental Demonstration of Angle-Dependent GMR Effect in Py/WSe₂/Co Spin Valve Structure

IEEE transactions on electron devices/IEEE transactions on electron devices(2021)

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Abstract
Spin valves (SVs) based on 2-D materials have garnered so much attention in the past decade. One of the major interests is the sake of getting a higher magnetoresistance (MR) ratio to facilitate industrial applications. However, miscellaneous effects are mixed in the obtained MR and the contributions of 2-D materials are not clearly distinguished even. In this article, we report the angle-dependent MR in WSe2 SV for different orientations of applied magnetic field. By setting reference samples with different structures, the contributions of anisotropic MR (AMR) and MR of 2-D materials are distinguished. The MR ratios generated by WSe2 show a monotonic decreasing trend with the increasing included angle between the direction of magnetic field and the length axis of bottom electrode Py. The related angular variation in such SV structure can be used for future researches and industrial applications.
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Key words
Electrodes,Magnetic tunneling,Frequency modulation,Saturation magnetization,Magnetic hysteresis,Resistance,Perpendicular magnetic recording,2-D material,angle-dependent,anisotropic magnetoresistance (AMR),giant magnetoresistance (GMR),organic magnetoresistance (OMR),spintronics
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