Low ON-Resistance (2.5 mΩ · cm 2 ) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

Jun Tsunoda,Masayuki Iwataki,Kiyotaka Horikawa,Shotaro Amano,Kosuke Ota,Atsushi Hiraiwa,Hiroshi Kawarada

IEEE Transactions on Electron Devices（2021）

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摘要

Diamonds are highly favored materials in high-temperature and high-power operations owing to their excellent characteristics, and diamond p-channel field-effect transistors (p-FETs) considerably aid in the improvement of CMOS technology, providing high performance, which is essential for inverter operations. This study demonstrates a low ON-resistance (001) vertical-type two-dimensional hole gas (...

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关键词

Logic gates,Diamond,Electrodes,MOSFET,Substrates,Scanning electron microscopy,Nitrogen

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