Electrical Low-Frequency 1/F(Gamma) Noise Due To Surface Diffusion Of Scatterers On An Ultra-Low-Noise Graphene Platform

Low-frequency 1/f(gamma) noise is ubiquitous, even in high-end electronic devices. Recently, it was found that adsorbed O-2 molecules provide the dominant contribution to flux noise in superconducting quantum interference devices. To clarify the basic principles of such adsorbate noise, we have investigated low-frequency noise, while the mobility of surface adsorbates is varied by temperature. We measured low-frequency current noise in suspended monolayer graphene Corbino samples under the influence of adsorbed Ne atoms. Owing to the extremely small intrinsic noise of suspended graphene, we could resolve a combination of 1/f(gamma) and Lorentzian noise induced by the presence of Ne. We find that the 1/f(gamma) noise is caused by surface diffusion of Ne atoms and by temporary formation of few-Ne-atom clusters. Our results support the idea that clustering dynamics of defects is relevant for understanding of 1/f noise in metallic systems.