METHODS FOR FORMING A DOPED METAL CARBIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

A method for depositing a doped metal carbide film on a substrate is disclosed. The method can include a step of depositing a doped metal carbide film on a substrate by using at least one deposition cycle of a cyclical deposition process; and a step of allowing the doped metal carbide film to be in contact with plasma generated from a hydrogen containing gas. In addition, disclosed is a semiconductor device structure including a doped metal carbide film formed by the method of the present disclosure. It is possible to form a doped metal carbide film having a desirable effective work function and low electrical resistivity.