Convolutional Compaction-Based MRAM Fault Diagnosis

2021 IEEE European Test Symposium (ETS)(2021)

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摘要
Spin-transfer torque magnetoresistive random-access memories (STT-MRAMs) are gradually superseding conventional SRAMs as last-level cache in System-on-Chip designs. Their manufacturing process includes trimming a reference resistance in STT-MRAM modules to reliably determine the logic values of 0 and 1 during read operations. Typically, an on-chip trimming routine consists of multiple runs of a te...
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关键词
Fault diagnosis,Resistance,Ports (computers),Torque,Systematics,Random access memory,Built-in self-test
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