Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State

Haibo Gong,Rubab Ume,Vadim Tokranov,Michael Yakimov, Devendra Sadana,Kevin Brew,Guy Cohen,Sandra Schujman,Karsten Beckmann,Nathaniel Cady,Serge Oktyabrsky

2021 Device Research Conference (DRC)（2021）

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摘要

Among various phase-change memory materials (PCMs), Ge 2 Sb 2 Te 5 (GST) is an outstanding representative, widely used in both optical storage and electronic memories [1] . The intrinsic drawbacks of this GST, however, such as tellurium volatility and low amorphous phase stability (resistance retention), hinder it from being a perfect candidate. Tellurium-free antimony-based PCMs have been the sub...

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