Reduced Switching Current Density and Improved Interface Quality using Oxynitride Tunnel Barrier in Magnetic Tunnel Junctions for MRAM Application

Magnetic tunnel junctions (MTJs) have recently been commercialized for memory applications, both as read-head sensors and non-volatile magnetic random-access memories (MRAMs) [1] . The key parameters of MTJs are resistance area (RA) product and write/switching current density ( J C ), which affect the device failure and decrease the stability due to localized heating. The RA and J C are critically...