A Novel Trench SiC-MOSFETs Fabricated by Multiple-Ion-Implantation into Tilted Trench Side Walls (MIT2-MOS)

Katsutoshi Sugawara,Yutaka Fukui,Rina Tanaka,Kohei Adachi,Yasuhiro Kagawa,Shingo Tomohisa,Naruhisa Miura, Eisuke Suekawa, Yoshiaki Terasaki

PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management（2021）

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摘要

We have developed the new trench gate SiC MOSFET(MIT2-MOS) applying bottom p-well region (BPW), sidewall connection region (SC) between p-well (PW) and BPW, and JFET doping region (JD). The structure has been fabricated by utilizing multiple ion implantations with tilted beam angle after trench etching. MIT2-MOS demonstrates markedly low Ron,sp of 1.9 mOmegacm2 at Vth of 4.1 V with breakdown volta...

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