A Flexible Lif Neuron Based On Nbox Memristors For Neural Interface Applications
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)(2021)
摘要
In this work, we demonstrate a flexible NbOx-based memristor for spiking neuron implementation. The NbOx device exhibits stable threshold switching behavior and superior bending capability with a curvature radius of 2.5 mm. Based on such a device, we build a Leaky Integrate-and-Fire neuron and achieve four basic neuron features: all-or-nothing, threshold-driven spiking, refractory period, and strength-modulated frequency response. Moreover, the constructed flexible neuron is compatible with wearable sensing systems and can transform sensed analog signals to spike signals, leading them favorably to be used as neural interfaces.
更多查看译文
关键词
flexible LIF neuron, NbOx memristor, neural interface
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要