Fabrication On N-Ga2o3/P-Gan Diode By Wet-Etching Lift-Off And Transfer-Print

In the paper, we transfer-print a 5 x 5mm(2) n-type beta-Ga(2)O3 nanomembrane onto a p-GaN/sapphire substrate to form an n-Ga2O3/p-GaN diode, after repairing the dry-etching damage of p-GaN during the device fabrication. The diode has excellent electrical performance, including high rectification ratio (similar to 3.65 x 10(6) at +/- 5 V) and low dark current density (similar to 2.19x10(-7) Acm(-2) at -5 V). These results indicate that wet-etching lift-off and transfer-print technique can be used to fabricate high quality Ga2O3-based heterojunction bipolar devices.