Bi doping stimulation on the visible-light absorption of In2O3 ceramics

Jiwoong Kim,Hongjun Park,Doukyun Kim,Seojin Yang,Sehwan Song,Yesul Choi,Hyegyeong Kim,Jong-Seong Bae,Chinh Tam Le,Yong Soo Kim,Mihyun Yang,Kyuwook Ihm,Kug-Seung Lee,Chul-Hong Park,Sungkyun Park

Journal of Alloys and Compounds（2021）

引用 7|浏览9

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摘要

•Trivalent Bi doping in wide bandgap In2O3 exhibits visible light absorption.•Bi-doping in the In2O3 generates an in-gap state increasing the valence band maximum.•DFT analysis reveals pnictogen promotes the potential p-type characteristics.

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关键词

Transparent conducting oxide,p-type oxide semiconductor,Visible light absorption,Valence band engineering

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