Beta-Ga2o3 Micro-Flake Fet Sbpd With Record Detectivity Of 3.87x10(17) Jones For Weak Light Detection

High performance beta-Ga2O3 field-effect transistor (FET) solar-blind photodetectors (SBPDs) with record detectivity (D*) of 3.87 x 10(17) Jones, responsivity (R) of 2.50x10(4) A/W, photo-to-dark-current ratio (PDCR) of 7.87 x 10(6), and external quantum efficiency (EQE) of 1.22x 10(7)% are reported based on mechanically exfoliated beta-Ga2O3 micro-flakes. The excellent performance of the beta-Ga2O3 detector under mu W/cm(2) level illumination makes it one of the best Ga2O3 SBPDs towards weak light detection, sharp imaging, and safe communication application.