Effect of leveler on electrical resistance and microstructural of electroplated copper after heat treatment

Three different Cu films using three commercial levelers (leveler A, leveler B and leveler C) were obtained by electrodeposition, and the films were heat treated at different temperatures. The effects of three different levelers on the electrical properties of Cu films during annealing were compared from the aspects of microstructure and impurities. After heat treatment at 200 degrees C for 10 min, the sheet resistances of the three Cu films obtained by leveler A, leveler B and leveler C dropped to 84.55%, 82.2% and 83.53% of the initial values respectively. The impurity content of these films after heat treatment varies greatly. The impurity distribution along the depth direction is not uniform with an oscillation phenomenon. In addition, this work will provide a basis for obtaining Cu films with excellent electrical properties in electronic industry applications.