Tri-Layer Structure Znga2o4-Based Resistive Random Access Memory

This study aimed to improve the performance of RRAM cell with switching layer of ZnGa2O4. We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al0.05Ga0.95O and In0.9Ga0.1O, into the resistance-switching layer. The on/off ratio can be increased from 10(1) to 10(2) by inserting Al0.05Ga0.95O layer. Moreover, with the aids of In0.9Ga0.1O layer, reset voltage of the RRAM device can be reduced to -0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.