All-Oxide P-N Junction Thermoelectric Generator Based On Snox And Zno Thin Films

Achieving thermoelectric devices with high performance based on low-cost and nontoxic materials is extremely challenging. Moreover, as we move toward an Internet-of-Things society, a miniaturized local power source such as a thermoelectric generator (TEG) is desired to power increasing numbers of wireless sensors. Therefore, in this work, an all-oxide p-n junction TEG composed of low-cost, abundant, and nontoxic materials, such as n-type ZnO and p-type SnOx thin films, deposited on borosilicate glass substrate is proposed. A type II heterojunction between SnOx and ZnO films was predicted by density functional theory (DFT) calculations and confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Moreover, scanning transmission electron microscopy (STEM) combined with energy-dispersive X-ray spectroscopy (EDS) show a sharp interface between the SnOx and ZnO layers, confirming the high quality of the p-n junction even after annealing at 523 K. ZnO and SnOx thin films exhibit Seebeck coefficients (alpha) of similar to 121 and similar to 258 mu V/K, respectively, at 298 K, resulting in power factors (PF) of 180 mu W/m K-2 (for ZnO) and 37 mu W/m K-2 (for SnOx). Moreover, the thermal conductivities of ZnO and SnOx films are 8.7 and 1.24 W/m K, respectively, at 298 K, with no significant changes until 575 K. The four pairs all-oxide TEG generated a maximum power output (P-out) of 1.8 nW (approximate to 126 mu W/cm(2)) at a temperature difference of 160 K. The output voltage (V-out) and output current (I-ou(t)) at the maximum power output of the TEG are 124 mV and 0.0146 mu A, respectively. This work paves the way for achieving a high-performance TEG device based on oxide thin films.