Model of the Weak Reset Process in HfO x Resistive Memory for Deep Learning Frameworks
IEEE Transactions on Electron Devices(2021)
摘要
The implementation of current deep learning training algorithms is power-hungry, due to data transfer between memory and logic units. Oxide-based resistive random access memories (RRAMs) are outstanding candidates to implement in-memory computing, which is less power-intensive. Their weak RESET regime is particularly attractive for learning, as it allows tuning the resistance of the devices with r...
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关键词
Resistance,Deep learning,Switches,Integrated circuit modeling,Task analysis,Noise measurement,Hafnium oxide
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