High Speed and Low Dark Current InGaAs Photodiodes on CMOS-Compatible Silicon by Heteroepitaxy

Bowen Song,Bei Shi,Si Zhu,Simone Tommaso Suran Brunelli,Jonathan Klamkin

2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)（2021）

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摘要

High speed InGaAs photodiodes were realized on (001) Si by direct heteroepitaxy, demonstrating low dark current, high responsivity, a bandwidth of 11 GHz and up to 30 Gbps operation at a wavelength of 1550 nm.

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关键词

(160.1890) Detector materials,(040.5160) Photodetectors,(200.4650) Optical interconnects

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